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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV958; BLV958FL UHF power transistors
Product specification Supersedes data of 1997 Oct 15 2000 Jan 12
Philips Semiconductors
Product specification
UHF power transistors
FEATURES * Internal input and output matching for easy matching, high gain and efficiency * Poly-silicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Base stations in the 800 to 960 MHz frequency range. PINNING - SOT391A PIN 1 2 3 SYMBOL c b e base emitter; connected to flange DESCRIPTION collector PINNING - SOT391B PIN 1 2 Ground plane DESCRIPTION
BLV958; BLV958FL
NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, both with a ceramic cap.
SYMBOL c b e base
DESCRIPTION collector emitter
handbook, halfpage 1
c b
3
handbook, halfpage 1
c b
2 Top view
MAM203
e
2 Top view
MSA465
e
Fig.1 Simplified outline (SOT391A) and symbol.
Fig.2 Simplified outline (SOT391B) and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 960 VCE (V) 26 26 PL (W) 75 75 Gp (dB) 8 8.5 C (%) 50 50
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
2000 Jan 12
2
Philips Semiconductors
Product specification
UHF power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb 25 C CONDITIONS open emitter open base open collector
BLV958; BLV958FL
MIN. - - - - - - -65 -
MAX. 70 30 3 15 15 250 +150 200
UNIT V V V A A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 250 W; Tmb = 25 C; note 1 VALUE 0.7 0.2 UNIT K/W K/W
2000 Jan 12
3
Philips Semiconductors
Product specification
UHF power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Notes 1. Measured under pulsed conditions: tp 500 s; 0.01. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance CONDITIONS open emitter; IC = 60 mA open base; IC = 150 mA open collector; IE = 3 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 4.5 A; note 1; see Fig 3 VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2; see Fig 4
BLV958; BLV958FL
MIN. 70 30 3 - 30 -
TYP. - - - - - 75
MAX. - - - 5 120 -
UNIT V V V mA
pF
2. Value of Cc is that of the die only, it is not measurable because of internal matching network.
handbook, halfpage
120
MLD243
handbook, halfpage
200
MLD244
h FE
Cc (pF) (1) 150
80 (2) 100
40 50
0
0
4
8
12 I C (A)
16
0
0
10
20
30
VCB (V)
40
Measured under pulsed conditions; tp 500 s; 0.01. (1) VCE = 26 V. (2) VCE = 10 V.
Value Cc is that of the die only, it is not measurable because of internal matching network. IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
2000 Jan 12
4
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter, class-AB test circuit; Rth mb-h = 0.2 K/W. MODE OF OPERATION f (MHz) 900 CW, class-AB 960 VCE (V) 26 26 ICQ (mA) 200 200 PL (W) 75 75 Gp (dB) 8 typ. 9.5 8.5 typ. 9.5 C (%) 50 typ. 55 50 typ. 55
Ruggedness in class-AB operation The transistors are capable of withstanding a load mismatch corresponding to VSWR = 4 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 200 mA; Th = 25 C; Rth mb-h = 0.2 K/W.
handbook, halfpage
12
MLD245
60 C (%) 40
MLD246
handbook, halfpage
120
Gp (dB) 8
Gp
PL (W) 80
C
4
20
40
0 0 20 40 60
0 80 100 P L (W)
0 0 4 8 12 P i (W) 16
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
Fig.5
Power gain and collector efficiency as functions of load power; typical values.
Fig.6
Load power as a function of input power; typical values.
2000 Jan 12
5
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
handbook, full pagewidth
L5 +Vbias C4 C5 C6 C7 R1
C9
C10
L8 R2 +VS C16
C13
C14
C15
C8
L6
L7
C11
C12
input 50
,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,
L3 L4 L9 L10 L1 L2 C2 DUT C19 L11 L12 C1 C20 C18 C3 C17 C21
output 50
MBH109
Fig.7 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 7 and 8) COMPONENT C1, C20 C2, C19 C3 C4 C5 C6 C7 C8, C11, C14 C9, C10, C13 C12 C15 C16 DESCRIPTION Tekelec, type 5201 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 solid tantalum capacitor multilayer ceramic chip capacitor electrolytic capacitor VALUE 0.8 to 10 pF 15 pF; 500 V 6.2 pF; 500 V 10 F; 63 V 22 nF; 50 V 1 nF; 500 V 33 pF; 500 V 100 pF; 500 V 20 pF; 500 V 1 F; 35 V 100 nF; 50 V 47 F; 40 V 2222 036 68479 2222 030 28109 DIMENSIONS CATALOGUE No.
2000 Jan 12
6
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
COMPONENT C17 C18 C21 L1 L2 L3 L4 L5, L8 L6 L7 L9 L10 L11 L12 R1, R2 Notes
DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 Ferroxcube chip-bead grade 4S2 5 turns enamelled 1 mm copper wire 4 turns enamelled 1 mm copper wire stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 metal film resistor
VALUE 4.7 pF; 500 V 3.3 pF; 500 V 2.7 pF; 500 V
DIMENSIONS
CATALOGUE No.
length 51 mm width 2.2 mm length 7 mm width 2.2 mm length 5.5 mm width 20 mm length 9 mm width 20 mm 4330 030 36300 int. diameter 4 mm close wound int. diameter 4 mm close wound length 12.5 mm width 20 mm length 2 mm width 20 mm length 17 mm width 2.2 mm length 41 mm width 2.2 mm 100 ; 0.4 W
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2.25); thickness 132 inch.
2000 Jan 12
7
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
handbook, full pagewidth
75
75
70
70
C5 C4 C6 +Vbias L1 L5 L2 C2 C3 C1 C19 C18 C17 C21 C7 R1 C8 C9 L6 L3 L4 L9 C10 L10 L7 C11
C12 C13 R2 L8
C15 C16 C14 +VS L12
L11 C20
MBH110
The same printed-circuit board can also be used for the flangeless version FL. Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component layout and printed-circuit board for 960 MHz class-AB test circuit.
2000 Jan 12
8
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
MLD249
MLD252
handbook, halfpage
5
handbook, halfpage
6
Zi () 4 xi 3
ZL ()
4 RL
2
0 2 2 ri 1 4 XL
0 800
850
900
950
1000 1050 f (MHz)
6 800
850
900
950
1000 1050 f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W; Th = 25 C; Rth mb-h = 0.2 K/W.
VCE = 26 V; ICQ = 200 mA; PL = 75 W; Th = 25 C; Rth mb-h = 0.2 K/W.
Fig.9
Input impedance as a function of frequency (series components); typical values.
Fig.10 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
12
MLD253
Gp (dB) 8
handbook, halfpage
4
Zi ZL
MBA451
0 800
850
900
950
1000 1050 f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W; Th = 25 C; Rth mb-h = 0.2 K/W.
Fig.11 Power gain as a function of frequency; typical values.
Fig.12 Definition of transistor impedance.
2000 Jan 12
9
Philips Semiconductors
Product specification
UHF power transistors
PACKAGE OUTLINES Flanged ceramic package; 2 mounting holes; 2 leads
BLV958; BLV958FL
SOT391A
D
A F
3
D1
U1 q C
B c
1
H
U2
p
E1
E
A b
2
w2 M C M
w1 M A M B M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.21 4.45 b 5.84 5.59 c 0.15 0.10 D D1 E E1 F 1.65 1.40 H 15.75 14.73 p 3.43 3.18 Q 2.29 2.03 q 20.32 0.800 U1 22.99 22.73 0.905 0.895 U2 9.91 9.65 w1 0.25 w2 0.51
10.87 10.92 10.26 10.29 10.67 10.67 10.06 10.03
0.205 0.230 0.006 0.428 0.430 0.404 0.405 0.065 0.620 0.175 0.220 0.004 0.420 0.420 0.396 0.395 0.055 0.580
0.135 0.090 0.125 0.080
0.390 0.010 0.020 0.380
OUTLINE VERSION SOT391A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-29 99-12-08
2000 Jan 12
10
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
Flangeless ceramic package; 2 leads
D
SOT391B
A
c L
1
0 5 scale E DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A 4.09 3.02 b 5.85 5.58 c 0.16 0.10 D E L 2.79 2.29 Q 1.02 0.76 10 mm
L b OUTLINE VERSION SOT391B
2
Q REFERENCES IEC JEDEC EIAJ
mm
11.54 10.93 10.51 9.90
EUROPEAN PROJECTION
ISSUE DATE 97-05-29
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
2000 Jan 12
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/04/pp12
Date of release: 2000
Jan 12
Document order number:
9397 750 06671

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